LOW-THRESHOLD 1.3 MU-M GAINASP-INP LASERS GROWN BY ATMOSPHERIC-PRESSURE MOVPE

被引：6

作者：

ROSE, B

DEVOLDERE, P

MIRCEA, A

ROBEIN, D

TROTTE, M

机构：

[1] CNET, Lab de Bagneux, Bagneux, Fr, CNET, Lab de Bagneux, Bagneux, Fr

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 12期

关键词：

ATMOSPHERIC PRESSURE AND DENSITY - SEMICONDUCTING INDIUM COMPOUNDS - Growth;

D O I：

10.1049/el:19850368

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room-temperature pulse operation has been achieved at and below 1. 3 mu m for GaInAsP/InP lasers grown by atmospheric-pressure metalorganic vapor phase epitaxy (MOVPE) 1000 mu m) have been obtained.

引用

页码：521 / 522

页数：2

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