LOW-THRESHOLD 1.3 MU-M GAINASP-INP LASERS GROWN BY ATMOSPHERIC-PRESSURE MOVPE

被引：6
|
作者：
ROSE, B
DEVOLDERE, P
MIRCEA, A
ROBEIN, D
TROTTE, M
机构：
[1] CNET, Lab de Bagneux, Bagneux, Fr, CNET, Lab de Bagneux, Bagneux, Fr
来源：
ELECTRONICS LETTERS | 1985年 / 21卷 / 12期
关键词：
ATMOSPHERIC PRESSURE AND DENSITY - SEMICONDUCTING INDIUM COMPOUNDS - Growth;
D O I：
10.1049/el:19850368
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Room-temperature pulse operation has been achieved at and below 1. 3 mu m for GaInAsP/InP lasers grown by atmospheric-pressure metalorganic vapor phase epitaxy (MOVPE) 1000 mu m) have been obtained.
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页码：521 / 522
页数：2
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