INHOMOGENEITIES IN N-TYPE AND SEMIINSULATING INP CRYSTALS STUDIED BY PHOTOLUMINESCENCE TOPOGRAPHY AND RAMAN-SCATTERING

被引：1
|
作者：
PASTRNAK, J [1 ]
GREGORA, I [1 ]
OSWALD, J [1 ]
CHVOJ, Z [1 ]
PEKAREK, L [1 ]
VORLICEK, V [1 ]
机构：
[1] TESLA VUSTA, CS-14000 PRAGUE, CZECHOSLOVAKIA
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1991年 / 126卷 / 02期
关键词：
D O I：
10.1002/pssa.2211260221
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The homogeneity of n-type Sn and S doped and semi-insulating Fe doped InP crystals is studied by luminescence topography, low temperature luminescence, and Raman scattering. As in GaAs nonrotational striations and faceting are the main sources of inhomogeneous impurity distribution in doped crystals and dislocations in semi-insulating ones. The fluctuations in free carrier concentration influencing the luminescence intensity are independently proved by Raman scattering spectra.
引用
收藏
页码：493 / 500
页数：8
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