SIO2 FILM DECOMPOSITION REACTION INITIATED BY CARBON IMPURITIES LOCATED AT A SI-SIO2 INTERFACE

被引：12
|
作者：
RAIDER, SI
HERD, SR
WALKUP, RE
机构：
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 19期
关键词：
D O I：
10.1063/1.106036
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have annealed Si-SiO2 structures at an elevated temperature in He(g) with SiO(g) added to the ambient. A SiO2 decomposition reaction that normally forms large voids in a thin SiO2 film during annealing in He(g) is not detected with the added SiO(g). Instead, chemically reactive SiC impurity sites which initiate the SiO2 decomposition reaction are found segregated along crystallographic planes in the substrate at the Si-SiO2 interface. The mechanism and technological importance of this interfacial reaction are discussed.
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页码：2424 / 2426
页数：3
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