PROBLEM OF THE INTRINSIC CARRIER DENSITY IN CDXHG1-X TE SOLID-SOLUTIONS

被引：0

作者：

KARACHEVTSEVA, LA

LYUBCHENKO, AV

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1992年 / 26卷 / 07期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：750 / 752

页数：3

共 50 条

[31] LATTICE THERMAL-CONDUCTIVITY OF CDXHG1-XSE SOLID-SOLUTIONS
PARANCHICH, SY
MAKOGONENKO, VN
TARASYUK, II
PARANCHICH, LD
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1986, 20 (01): : 73 - 76
[32] NONDISLOCATION ETCH FIGURES IN CRYSTALS OF CDXHG1-XTE SOLID-SOLUTIONS
KHOLINA, EN
KHAZIEVA, RA
BURSAK, SS
NEVSKII, OB
FILATOV, AV
POPOVYAN, GE
SUSOV, EV
PRIIMAK, AN
INORGANIC MATERIALS, 1988, 24 (08) : 1094 - 1097
[33] EFFECTIVE MASS OF HEAVY HOLES IN CDXHG1-XTE SOLID-SOLUTIONS
BELOGOROKHOV, AI
BELOV, AG
ZINGER, GM
RASHEVSKAYA, EP
ROGULIN, VY
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (03): : 349 - 349
[34] CHANGES IN THE PROPERTIES OF SURFACE-LAYERS OF CDXHG1-X TE CRYSTALS UNDER THE INFLUENCE OF AN ELECTRON-BEAM
PANIN, GN
YAKIMOV, EB
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (08): : 840 - 843
[35] INVESTIGATION OF THE SURFACE OF CDXHG1-XTE SOLID-SOLUTIONS BY X-RAY PHOTOELECTRON-SPECTROSCOPY
STARTSEVA, OA
KIROVSKAYA, IA
INORGANIC MATERIALS, 1994, 30 (01) : 129 - 130
[36] THERMOELECTRIC PROPERTIES OF SOLID-SOLUTIONS (MNTE)1-X-(AS2TE3)X
ALIZADE, MZ
NASIROV, YN
ILYASOV, TM
INORGANIC MATERIALS, 1978, 14 (02) : 266 - 267
[37] HIGH-FREQUENCY CONDUCTIVITY OF NORMAL-TYPE CDXHG1-X TE NEAR A METAL-INSULATOR TRANSITION
ARONZON, BA
KOPYLOV, AV
MEILIKHOV, EZ
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (03): : 294 - 298
[38] TAILS OF THE DENSITY OF STATES IN ZNXCDYHG1-X-YTE SOLID-SOLUTIONS
ANDRUKHIV, AM
GADAEV, OA
IVANOVOMSKII, VI
TSIDILKOVSKII, EI
SEMICONDUCTORS, 1993, 27 (02) : 192 - 194
[39] Intrinsic Point Defects in CdxHg1 - xSe Solid Solutions.
Tarasyuk, I.I.
Paranchich, S.Yu.
Paranchich, L.D.
Gavaleshko, N.P.
Makogonenko, V.N.
Neorganiceskie materialy, 1985, 21 (08): : 1297 - 1301
[40] PROFILE OF FUNDAMENTAL ABSORPTION-EDGE OF CDXHG1-XSE SOLID-SOLUTIONS
KIREEV, PS
VOLKOV, VV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (07): : 949 - 951

← 1 2 3 4 5 →