共 50 条
- [1] THERMOELECTRIC EFFECTS IN P-TYPE CDXHG1-X TE SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (11): : 1313 - 1316
- [2] METHOD FOR HOMOGENEITY CONTROL OF CRYSTAL COMPOSITION IN CDXHG1-X TE SOLID-SOLUTIONS BY ETCHING ZAVODSKAYA LABORATORIYA, 1974, 40 (07): : 825 - 825
- [3] CARRIER RECOMBINATION PROCESSES IN CDXHG1-X TE (REVIEW) SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (02): : 127 - 137
- [4] SOME PROPERTIES OF P-N JUNCTIONS IN CDXHG1-X TE SOLID SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 3 (12): : 1572 - &
- [5] NONLINEAR ABSORPTION OF LIGHT IN CDXHG1-X TE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (10): : 1091 - 1093
- [8] INTRINSIC CARRIER DENSITY AND ENERGY-BAND STRUCTURE OF HGTEXSE1-X SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (08): : 900 - 901
- [9] INFLUENCE OF INHOMOGENEOUS AUGER HEATING ON THE INTRINSIC PHOTOCONDUCTIVITY OF CDXHG1-X TE-TYPE SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (06): : 689 - 690
- [10] THEORY OF CDXHG1-X TE-BASED THRESHOLD PHOTORESISTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (12): : 1384 - 1388