HYDROGEN PASSIVATION OF GOLD-RELATED DEEP LEVELS IN SILICON

被引：107

|

作者：

PEARTON, SJ

TAVENDALE, AJ

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.26.7105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：7105 / 7108

页数：4

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