BORON-DIFFUSION DURING RAPID THERMAL ANNEALING OF PREAMORPHIZED SILICON

被引：0
|
作者：
SOLMI, S [1 ]
GUIMARAES, S [1 ]
LANDI, E [1 ]
NEGRINI, P [1 ]
机构：
[1] CNR,IST LAMEL,I-40126 BOLOGNA,ITALY
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 03期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C102 / C102
页数：1
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