INVERSION-LAYER CAPACITANCE AND MOBILITY OF VERY THIN GATE-OXIDE MOSFETS

被引：0

作者：

LIANG, MS ^{[1
]}

CHOI, JY ^{[1
]}

KO, PK ^{[1
]}

HU, C ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY, DEPT ELECT ENGN & COMP SCI, ELECTR RES LAB, BERKELEY, CA 94720 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 03期

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：409 / 413

页数：5

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