INVERSION-LAYER CAPACITANCE AND MOBILITY OF VERY THIN GATE-OXIDE MOSFETS

被引：0
|
作者：
LIANG, MS [1 ]
CHOI, JY [1 ]
KO, PK [1 ]
HU, C [1 ]
机构：
[1] UNIV CALIF BERKELEY, DEPT ELECT ENGN & COMP SCI, ELECTR RES LAB, BERKELEY, CA 94720 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 03期
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：409 / 413
页数：5
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