DEPOSITION AND ELECTRICAL CHARACTERIZATION OF VERY THIN SRTIO3 FILMS FOR ULTRA LARGE-SCALE INTEGRATED DYNAMIC RANDOM-ACCESS MEMORY APPLICATION

被引：74
|
作者：
HWANG, CS
PARK, SO
KANG, CS
CHO, HJ
KANG, HK
AHN, ST
LEE, MY
机构：
[1] Semiconductor R and D center, Samsung electronics Co.Ltd, Kiheung-eup
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 9B期
关键词：
THIN FILMS; SRTIO3; SPUTTERING; DEPLETION LAYER; LEAKAGE CURRENT; CAPACITANCE;
D O I：
10.1143/JJAP.34.5178
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
SrTiO3 thin films are deposited on Pt/SiO2/Si substrates using RF magnetron sputtering in a temperature range from 200 degrees C to 600 degrees C. The film deposited at 600 degrees C shows the best dielectric property and leakage current characteristics due to its good crystallinity and stoichiometric composition. Dielectric constant of the film deposited at 600 degrees C decreases with decreasing thickness from 235 at 120 nm to 145 at 30 nm. Leakage current shows a constant value of about 30 nA/cm(2) at 1.6 V in a thickness range from 50 nm to 120 nm but increases rapidly to 5 mu A/cm(2) at 30 nm. The electrical properties of the films are explained by a model of thr Pt/SrTiO3/Pt capacitor based on the band structure.
引用
收藏
页码：5178 / 5183
页数：6
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