MAGNETORESISTANCE OF N-TYPE INSB IN QUANTUM LIMIT

被引：0

作者：

ALIEV, MI ^{[1
]}

ASKEROV, BM ^{[1
]}

AGAEVA, RG ^{[1
]}

DAIBOV, AZ ^{[1
]}

ISMAILOV, IA ^{[1
]}

机构：

[1] ACAD SCI AZSSR,PHYS INST,BAKU,AZSSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：377 / 378

页数：2

共 50 条

[31] NON-LINEAR GALVANOMAGNETIC EFFEXTS DUE TO HOT ELECTRONS IN N-TYPE INSB IN QUANTUM LIMIT
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[34] RESISTANCE ANOMALY AND NEGATIVE MAGNETORESISTANCE IN N-TYPE INSB AT VERY LOW TEMPERATURES
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[38] TRANSVERSE MAGNETORESISTANCE OF HIGHLY DOPED N-TYPE INSB IN STRONG MAGNETIC-FIELDS
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[39] Quantum oscillations of microwave helicon dispersion in n-type InSb and InAs
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[40] QUANTUM OSCILLATIONS OF NERNST-ETTINGSHAUSEN EFFECT IN N-TYPE INSB
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