COMPOSITION DEPENDENCE OF PHOTOLUMINESCENCE OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：31

|

作者：

MIHARA, M

NOMURA, Y

MANNOH, M

YAMANAKA, K

NARITSUKA, S

SHINOZAKI, K

YUASA, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 10期

关键词：

D O I：

10.1063/1.332930

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3760 / 3764

页数：5

相关论文

共 50 条

[41] PHOTOLITHOGRAPHIC PATTERNING OF PROTECTIVE ARSENIC CAPPING ON MOLECULAR-BEAM EPITAXY-GROWN ALXGA1-XAS(001)
HUSBY, H
GREPSTAD, JK
BERNSTEIN, RW
APPLIED PHYSICS LETTERS, 1994, 64 (16) : 2124 - 2126
[42] DRY ETCHING AND IMPLANT ISOLATION CHARACTERISTICS OF ALXGA1-XAS GROWN BY METAL ORGANIC MOLECULAR-BEAM EPITAXY
PEARTON, SJ
ABERNATHY, CR
REN, F
FULLOWAN, TR
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (11) : 1042 - 1047
[43] SI DELTA-DOPING OF (011)-ORIENTED GAAS AND ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
SCHUBERT, EF
PFEIFFER, L
WEST, KW
LUFTMAN, HS
ZYDZIK, GJ
APPLIED PHYSICS LETTERS, 1994, 64 (17) : 2238 - 2240
[44] PROPERTIES ALXGA1-XAS(XAL-CONGRUENT-TO-0.3)GROWN BY MOLECULAR-BEAM EPITAXY ON MISORIENTED SUBSTRATES
TSUI, RK
CURLESS, JA
KRAMER, GD
PEFFLEY, MS
WICKS, GW
JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) : 1508 - 1512
[45] LOW-TEMPERATURE PHOTOLUMINESCENCE OF LIGHTLY SI-DOPED ALXGA1-XAS ON (511) GAAS SUBSTRATES GROWN BY MOLECULAR-BEAM EPITAXY
TAKAMORI, T
FUKUNAGA, T
NAKASHIMA, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06): : L920 - L922
[46] THE ELECTRIC-FIELD INDUCED PHOTOLUMINESCENCE PROPERTIES OF GAAS ALXGA1-XAS QUANTUM-WELL STRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY
NAGANUMA, M
ISHIBASHI, T
HORIKOSHI, Y
JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) : 644 - 647
[47] COMPOSITIONAL MODULATION IN ALXGA1-XAS EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON THE (111) FACETS OF GROOVES IN A NONPLANAR SUBSTRATE
HOENK, ME
NIEH, CW
CHEN, HZ
VAHALA, KJ
APPLIED PHYSICS LETTERS, 1989, 55 (01) : 53 - 55
[48] VIBRATIONAL-MODES OF CARBON-ALUMINUM COMPLEXES IN ALXGA1-XAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
ONO, H
FURUHATA, N
APPLIED PHYSICS LETTERS, 1991, 59 (15) : 1881 - 1883
[49] IN-SITU REFLECTANCE ANISOTROPY STUDIES OF ALXGA1-XAS LAYERS GROWN ON GAAS(001) BY MOLECULAR-BEAM EPITAXY
MORRIS, SJ
ZETTLER, JT
ROSE, KC
WESTWOOD, DI
WOOLF, DA
WILLIAMS, RH
RICHTER, W
JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) : 3115 - 3120
[50] SELECTIVE METALORGANIC REACTIVE ION ETCHING OF MOLECULAR-BEAM EPITAXY GAAS/ALXGA1-XAS
LAW, VJ
JONES, GAC
RITCHIE, DA
PEACOCK, DC
FROST, JEF
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (06): : 1479 - 1482

← 1 2 3 4 5 →