SOME ELECTRICAL-PROPERTIES OF MIXED AMORPHOUS THIN-FILMS OF GERMANIUM AND SILICON MONOXIDE BEFORE ELECTROFORMING

被引：0
|
作者：
ABEYSURIYA, WDBS
HOGARTH, CA
机构：
[1] Department of Physics, Brunel University, Uxbridge UB8 3PH, Middlesex, United Kingdom
来源：
JOURNAL OF MATERIALS SCIENCE | 1987年 / 22卷 / 09期
关键词：
D O I：
10.1007/BF01161202
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
SEMICONDUCTING GERMANIUM
引用
收藏
页码：3342 / 3348
页数：7
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