THE CHARACTERIZATION OF THE VARIABILITY OF SILICON-WAFERS BY LEAKAGE CURRENT MEASUREMENTS

被引：0
|
作者：
MURRAY, EM [1 ]
SUGANO, T [1 ]
ASADA, K [1 ]
机构：
[1] UNIV TOKYO,DEPT ELECTR ENGN,BUNKYO KU,TOKYO 113,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1986年 / 25卷 / 02期
关键词：
D O I：
10.1143/JJAP.25.L99
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：L99 / L101
页数：3
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