EFFECT OF DISORDER ON STRUCTURES DUE TO INTERBAND-TRANSITIONS IN SILICON

被引：8
|
作者：
GEDDO, M [1 ]
MAGHINI, D [1 ]
STELLA, A [1 ]
机构：
[1] UNIV PAVIA,CTR INT UNIV STRUTTURA MAT,I-27100 PAVIA,ITALY
来源：
SOLID STATE COMMUNICATIONS | 1986年 / 58卷 / 07期
关键词：
D O I：
10.1016/0038-1098(86)90038-4
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：483 / 484
页数：2
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