EFFECT OF DISORDER ON STRUCTURES DUE TO INTERBAND-TRANSITIONS IN SILICON

被引：8

作者：

GEDDO, M ^{[1
]}

MAGHINI, D ^{[1
]}

STELLA, A ^{[1
]}

机构：

[1] UNIV PAVIA,CTR INT UNIV STRUTTURA MAT,I-27100 PAVIA,ITALY

来源：

SOLID STATE COMMUNICATIONS | 1986年 / 58卷 / 07期

关键词：

D O I：

10.1016/0038-1098(86)90038-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：483 / 484

页数：2

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