NEODYMIUM-DOPED GAAS LIGHT-EMITTING-DIODES

被引：7
|
作者：
CHANG, SJ
机构：
[1] Department of Electrical Engineering, National Cheng Kung University
来源：
JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 06期
关键词：
D O I：
10.1063/1.359827
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Nd-doped semiconductor light-emitting diodes were fabricated by implanting Nd ions into GaAs epi-layer. The fabricated GaAs:Nd diodes show good current-voltage characteristics with a typical reverse breakdown voltage between 8 and 12 V. By injecting minority carriers into the diodes, Nd3+ related emissions were observed, at 77 K, in the 0.92, 1.11, and 1.3 mu m regions. These electroluminescence signals correspond to the transitions from Nd3+ F-4(3/2) State to the Nd3+ I-4(9/2), I-4(11/2) and I-4(13/2) states, respectively. The measured external quantum efficiency of the GaAs:Nd diodes at 77 K, was 5 X 10(-7). (C) 1995 American Institute of Physics.
引用
收藏
页码：4279 / 4281
页数：3
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