Structural and magnetic properties of Yb-implanted GaN

被引：4
|
作者：
Yin Chunhai [1 ]
Liu Chao [1 ]
Tao Dongyan [1 ]
Zeng Yiping [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
JOURNAL OF SEMICONDUCTORS | 2013年 / 34卷 / 05期
基金：
中国国家自然科学基金;
关键词：
diluted magnetic semiconductors (DMS); room temperature ferromagnetism; ion implantation; magnetic anisotropy;
D O I：
10.1088/1674-4926/34/5/053002
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
N-type, p-type and unintentionally-doped GaN were implanted with Yb ions by double energy ion implantation and the samples were annealed at 900 degrees C. The structural and magnetic properties of the samples have been studied by high-resolution X-ray diffraction (HRXRD), Raman scattering and with a superconducting quantum interference device (SQUID). No second phase has been observed and implantation induced defects can not be completely removed by rapid thermal annealing. The annealed samples show magnetic anisotropy and clear ferromagnetic behavior at room temperature. P-, u- and n-GaN: Yb samples show an effective magnetic moment of 1.60, 1.24 and 0.59 mu B/Yb, respectively.
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页数：4
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