ELECTRICAL PROPERTIES OF CLEAVED GERMANIUM SURFACES

被引:41
作者
PALMER, DR
MORRISON, SR
DAUENBAUGH, CE
机构
关键词
D O I
10.1016/0022-3697(60)90202-X
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
引用
收藏
页码:27 / 32
页数:6
相关论文
共 12 条
[1]   ELECTRICAL PROPERTIES OF CLEAN GERMANIUM SURFACES [J].
BARNES, GA ;
BANBURY, PC .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 71 (462) :1020-1021
[2]  
BARNES GA, 1959, J PHYS CHEM SOLIDS, V8, P113
[3]   ION BOMBARDMENT-CLEANING OF GERMANIUM AND TITANIUM AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J].
FARNSWORTH, HE ;
SCHLIER, RE ;
GEORGE, TH ;
BURGER, RM .
JOURNAL OF APPLIED PHYSICS, 1955, 26 (02) :252-253
[4]   ELECTRONIC SURFACE STATES AND THE CLEANED GERMANIUM SURFACE [J].
HANDLER, P ;
PORTNOY, WM .
PHYSICAL REVIEW, 1959, 116 (03) :516-526
[5]  
Handler P., 1957, SEMICONDUCTOR SURFAC, P23
[6]   CALCULATION OF THE SPACE CHARGE, ELECTRIC FIELD, AND FREE CARRIER CONCENTRATION AT THE SURFACE OF A SEMICONDUCTOR [J].
KINGSTON, RH ;
NEUSTADTER, SF .
JOURNAL OF APPLIED PHYSICS, 1955, 26 (06) :718-720
[7]   FREE BONDS ON THE CLEAN SURFACES OF GERMANIUM SINGLE CRYSTALS [J].
KOBAYASHI, A ;
KAWAJI, S .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1957, 12 (09) :1054-1054
[8]   MEASUREMENTS OF SURFACE ELECTRICAL PROPERTIES OF BOMBARDMENT-CLEANED GERMANIUM [J].
LAW, JT ;
GARRETT, CGB .
JOURNAL OF APPLIED PHYSICS, 1956, 27 (06) :656-656
[9]  
PALMER DR, 1958, B AM PHYS SOC, V3, P138
[10]  
Schlier R.E., 1957, SEMICONDUCTOR SURFAC, P3