ELECTRONIC SURFACE STATES AND THE CLEANED GERMANIUM SURFACE

被引：48
作者：
HANDLER, P
PORTNOY, WM
机构：
来源：
PHYSICAL REVIEW | 1959年 / 116卷 / 03期
关键词：
D O I：
10.1103/PhysRev.116.516
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：516 / 526
页数：11
相关论文
共 45 条
[1]   VARIATION OF CONTACT POTENTIAL WITH CRYSTAL FACE FOR GERMANIUM [J].
ALLEN, FG ;
FOWLER, AB .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1957, 3 (1-2) :107-114
[2]   WORK-FUNCTION STUDIES OF GERMANIUM CRYSTALS CLEANED BY ION BOMBARDMENT [J].
DILLON, JA ;
FARNSWORTH, HE .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (02) :174-184
[3]   ELECTRICAL PROPERTIES OF HYDROGEN ADSORBED ON SILICON [J].
EISINGER, J .
JOURNAL OF CHEMICAL PHYSICS, 1959, 30 (04) :927-930
[4]   PROPERTIES OF HYDROGEN CHEMISORBED ON TUNGSTEN [J].
EISINGER, J .
JOURNAL OF CHEMICAL PHYSICS, 1958, 29 (05) :1154-1160
[5]   APPLICATION OF THE ION BOMBARDMENT CLEANING METHOD TO TITANIUM, GERMANIUM, SILICON, AND NICKEL AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J].
FARNSWORTH, HE ;
SCHLIER, RE ;
GEORGE, TH ;
BURGER, RM .
JOURNAL OF APPLIED PHYSICS, 1958, 29 (08) :1150-1161
[6]   ION BOMBARDMENT-CLEANING OF GERMANIUM AND TITANIUM AS DETERMINED BY LOW-ENERGY ELECTRON DIFFRACTION [J].
FARNSWORTH, HE ;
SCHLIER, RE ;
GEORGE, TH ;
BURGER, RM .
JOURNAL OF APPLIED PHYSICS, 1955, 26 (02) :252-253
[7]  
FORMAN R, 1959, B AM PHYS SOC 2, V4, P26
[8]   CONTACT POTENTIAL MEASUREMENTS ON CLEANED GERMANIUM SURFACES [J].
FOWLER, AB .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (04) :556-558
[9]   PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J].
GARRETT, CGB ;
BRATTAIN, WH .
PHYSICAL REVIEW, 1955, 99 (02) :376-387
[10]  
Goodwin ET, 1939, P CAMB PHILOS SOC, V35, P232
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