GROWTH AND CHARACTERIZATION OF COMPOUND SEMICONDUCTORS BY ATOMIC LAYER EPITAXY

被引：25
|
作者：
TISCHLER, MA
BEDAIR, SM
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期
关键词：
D O I：
10.1016/0022-0248(86)90287-3
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：89 / 94
页数：6
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