TRANSFORMATION OF THE VOLT AMPERE CHARACTERISTICS OF A FIELD-EFFECT TRANSISTOR THROUGH CHANNEL SHORTENING

被引：0
|
作者：
PAVLOV, GP
机构：
来源：
SOVIET MICROELECTRONICS | 1986年 / 15卷 / 02期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
6
引用
收藏
页码：95 / 99
页数：5
相关论文
共 50 条
  • [41] THIN-FILM ORGANIC CHANNEL FIELD-EFFECT TRANSISTOR
    AGUILHON, L
    BOURGOIN, JP
    BARRAUD, A
    HESTO, P
    SYNTHETIC METALS, 1995, 71 (1-3) : 1971 - 1974
  • [42] RF Performance of Short Channel Graphene Field-Effect Transistor
    Wu, Y. Q.
    Lin, Y. -M.
    Jenkins, K. A.
    Ott, J. A.
    Dimitrakopoulos, C.
    Farmer, D. B.
    Xia, F.
    Grill, A.
    Antoniadis, D. A.
    Avouris, Ph.
    2010 INTERNATIONAL ELECTRON DEVICES MEETING - TECHNICAL DIGEST, 2010,
  • [43] CHARACTERISTICS AND APPLICATIONS OF A V-SHAPED NOTCHED-CHANNEL FIELD-EFFECT TRANSISTOR (VFET)
    MOK, TD
    SALAMA, CAT
    SOLID-STATE ELECTRONICS, 1976, 19 (02) : 159 - 166
  • [44] Numerical Modeling of GaAs Field-Effect Transistor Characteristics as Functions of Channel Doping Profile Parameters
    Shestakov, A. K.
    Zhuravlev, K. S.
    OPTOELECTRONICS INSTRUMENTATION AND DATA PROCESSING, 2012, 48 (01) : 105 - 109
  • [45] Characteristics of GaAs/InGaP/GaAs doped channel camel-gate field-effect transistor
    Yu, KH
    Chang, WL
    Feng, SC
    Liu, WC
    SOLID-STATE ELECTRONICS, 2000, 44 (11) : 2069 - 2075
  • [46] Numerical modeling of GaAs field-effect transistor characteristics as functions of channel doping profile parameters
    A. K. Shestakov
    K. S. Zhuravlev
    Optoelectronics, Instrumentation and Data Processing, 2012, 48 (1) : 105 - 109
  • [47] Reduction of ambipolar characteristics of vertical channel tunneling field-effect transistor by using dielectric sidewall
    Park, Chun Woong
    Choi, Woo Young
    Lee, Jong-Ho
    Cho, Il Hwan
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 28 (11)
  • [48] Impedance spectroscopy for pentacene field-effect transistor -channel formation process in transistor operation
    Tanaka, Yuya
    Noguchi, Yutaka
    Kraus, Michael
    Bruetting, Wolfgang
    Ishii, Hisao
    ORGANIC FIELD-EFFECT TRANSISTORS X, 2011, 8117
  • [49] Effect of "Mexican Hat" on Graphene Bilayer Field-Effect Transistor Characteristics
    Svintsov, Dmitry
    Vyurkov, Vladimir
    Ryzhii, Victor
    Otsuji, Taiichi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (07)
  • [50] OPTICALLY CONTROLLED CHARACTERISTICS OF A NEW HETEROJUNCTION FIELD-EFFECT TRANSISTOR
    CHAKRABARTI, P
    PAL, J
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1992, 54 (02): : 186 - 190
12345