Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells

被引：3
|
作者：
Zhang, XB
Briot, O
Gil, B
Aulombard, R
机构：
[1] JILIN UNIV,NATL LAB INTEGRATED OPTOELECTR,CHANGCHUN 130023,PEOPLES R CHINA
[2] UNIV MONTPELLIER,ETUD SEMICOND GRP,F-34900 MONTPELLIER,FRANCE
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 35卷 / 1-3期
关键词：
MOCVD; quantum well; thin film; gallium arsenide;
D O I：
10.1016/0921-5107(95)01396-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A series of In0.14Ga0.86As-GaAs quantum well structures have been grown by metal organic chemical vapor deposition (MOCVD). The measured dependence of photoluminescence (PL) energies on well width is compared with calculation. By the energy shift, line width and intensity change of PL spectroscopy, critical layer thickness has been identified. The critical layer thickness obtained for MOCVD grown material was found in agreement with theoretical value, but is smaller than molecular beam epitaxy grown ones.
引用
收藏
页码：184 / 187
页数：4
相关论文
共 50 条
  • [1] Critical layer thickness in MOCVD grown InGaAs-GaAs strained quantum wells
    Zhang, Xiaobo
    Briot, Olivier
    Gil, Bernard
    Aulombard, Roger
    Materials science & engineering. B, Solid-state materials for advanced technology, 1995, B35 (1-3): : 184 - 187
  • [2] CHARACTERIZATION OF INGAAS-GAAS STRAINED-LAYER LASERS WITH QUANTUM WELLS NEAR THE CRITICAL THICKNESS
    BEERNINK, KJ
    YORK, PK
    COLEMAN, JJ
    WATERS, RG
    KIM, J
    WAYMAN, CM
    APPLIED PHYSICS LETTERS, 1989, 55 (21) : 2167 - 2169
  • [3] CARRIER RECOMBINATION RATES IN STRAINED-LAYER INGAAS-GAAS QUANTUM-WELLS
    CHEN, YC
    WANG, P
    COLEMAN, JJ
    BOUR, DP
    LEE, KK
    WATERS, RG
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) : 1451 - 1454
  • [4] PHOTOCURRENT SPECTROSCOPY OF STRAINED-LAYER INGAAS-GAAS MULTIPLE QUANTUM-WELLS
    FANG, XM
    SHEN, XC
    HOU, HQ
    FENG, W
    ZHOU, JM
    KOCH, F
    SURFACE SCIENCE, 1990, 228 (1-3) : 351 - 355
  • [5] CRITICAL LAYER THICKNESS IN METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN INGAAS/GAAS STRAINED QUANTUM-WELLS
    ZHANG, XB
    BRIOT, O
    GIL, B
    AULOMBARD, R
    JOURNAL OF APPLIED PHYSICS, 1995, 78 (09) : 5490 - 5492
  • [6] OPTICAL INVESTIGATION OF HIGHLY STRAINED INGAAS-GAAS MULTIPLE QUANTUM-WELLS
    JI, G
    HUANG, D
    REDDY, UK
    HENDERSON, TS
    HOUDRE, R
    MORKOC, H
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3366 - 3373
  • [7] Optical investigation of InGaAs-GaAs strained layer quantum well structures
    Xu, Zhongying
    Chen, Z.G.
    Xu, Jizong
    Ge, Weikun
    Zheng, Baozhen
    Andersson, T.G.
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1988, 9 (06): : 563 - 569
  • [8] SUB-BAND ENERGIES OF HIGHLY STRAINED INGAAS-GAAS QUANTUM WELLS
    MACE, DAH
    ROGERS, DC
    MONSERRAT, KJ
    TOTHILL, JN
    DAVEY, ST
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (06) : 597 - 600
  • [9] INSITU MEASUREMENTS OF CRITICAL LAYER THICKNESS AND OPTICAL STUDIES OF INGAAS QUANTUM WELLS GROWN ON GAAS SUBSTRATES
    ELMAN, B
    KOTELES, ES
    MELMAN, P
    JAGANNATH, C
    LEE, J
    DUGGER, D
    APPLIED PHYSICS LETTERS, 1989, 55 (16) : 1659 - 1661
  • [10] TRANSMISSION AND PHOTOREFLECTANCE SPECTRA IN HIGHLY STRAINED INGAAS-GAAS MULTIPLE QUANTUM WELLS
    JI, G
    REDDY, UK
    HUANG, D
    HENDERSON, TS
    MORKOC, H
    SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (05) : 539 - 545
12345