CHARACTERIZATION OF INGAAS-GAAS STRAINED-LAYER LASERS WITH QUANTUM WELLS NEAR THE CRITICAL THICKNESS

被引：64

作者：

BEERNINK, KJ

YORK, PK

COLEMAN, JJ

WATERS, RG

KIM, J

WAYMAN, CM

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

[2] MCDONNELL DOUGLAS ELECTR SYST CO,ELMSFORD,NY 10523

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 21期

关键词：

D O I：

10.1063/1.102089

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2167 / 2169

页数：3

共 18 条

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[2] HIGH-POWER PHASE-LOCKED INGAAS STRAINED-LAYER QUANTUM WELL HETEROSTRUCTURE PERIODIC LASER ARRAY [J].

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APPLIED PHYSICS LETTERS, 1988, 53 (06) :457-459

[3] CONTINUOUS, HIGH-POWER OPERATION OF A STRAINED INGAAS/ALGAAS QUANTUM WELL LASER [J].

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ELBAUM, L ;

HARVEY, MG .

APPLIED PHYSICS LETTERS, 1988, 53 (24) :2371-2373

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[5] GRADED-INDEX SEPARATE-CONFINEMENT INGAAS/GAAS STRAINED-LAYER QUANTUM-WELL LASER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

FEKETA, D ;

CHAN, KT ;

BALLANTYNE, JM ;

EASTMAN, LF .

APPLIED PHYSICS LETTERS, 1986, 49 (24) :1659-1660

[6] RIDGE WAVE-GUIDE INJECTION-LASER WITH A GALNAS STRAINED-LAYER QUANTUM-WELL (LAMBDA=1-MU-M) [J].

FISCHER, SE ;

FEKETE, D ;

FEAK, GB ;

BALLANTYNE, JM .

APPLIED PHYSICS LETTERS, 1987, 50 (12) :714-716

[7] LONG-LIVED INGAAS QUANTUM WELL LASERS [J].

FISCHER, SE ;

WATERS, RG ;

FEKETE, D ;

BALLANTYNE, JM ;

CHEN, YC ;

SOLTZ, BA .

APPLIED PHYSICS LETTERS, 1989, 54 (19) :1861-1862

[8] CONTROVERSY OF CRITICAL LAYER THICKNESS FOR INGAAS/GAAS STRAINED-LAYER EPITAXY [J].

GOURLEY, PL ;

FRITZ, IJ ;

DAWSON, LR .

APPLIED PHYSICS LETTERS, 1988, 52 (05) :377-379

[9]

Jeng S. J., 1984, Materials Letters, V2, P359, DOI 10.1016/0167-577X(84)90111-3

[10] STRAINED-LAYER QUANTUM-WELL INJECTION-LASER [J].

LAIDIG, WD ;

CALDWELL, PJ ;

LIN, YF ;

PENG, CK .

APPLIED PHYSICS LETTERS, 1984, 44 (07) :653-655

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