(001) (110) SLIP IN GAAS

被引：0
|
作者：
QIN, CD
ROBERTS, SG
机构：
来源：
INSTITUTE OF PHYSICS CONFERENCE SERIES | 1989年 / 104期
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D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Dislocations of a new slip system, {001}<110>, have been found around indentations on the {001} surface of n-type GaAs. This mode of slip was studied by polish/etch techniques and by TEM, and was found to have a polar character, analogous to that of the normal {111}<11BAR0> slip.
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页码：321 / 326
页数：6
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