FAST-TRANSIENT SUSCEPTIBILITY OF A D-TYPE FLIP-FLOP

被引:5
|
作者
WALLACE, RE [1 ]
ZAKY, SG [1 ]
BALMAIN, KG [1 ]
机构
[1] UNIV TORONTO,DEPT ELECT & COMP ENGN,TORONTO,ON M5S 1A4,CANADA
基金
加拿大自然科学与工程研究理事会;
关键词
CMOS integrated circuits - Digital devices - Electric discharges - Electromagnetic fields - Electromagnetic wave interference - Electron device testing - Electrostatics - Failure analysis - Transients - Transistor transistor logic circuits;
D O I
10.1109/15.350243
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Human electrostatic discharge (ESD) produces a transient current pulse with a very fast risetime, which can be a source of electromagnetic interference in digital devices. The focus of this paper is the radiated susceptibility of D-type hip-hops implemented in various CMOS and TTL logic technologies. A transient impulse was used to simulate the radiated field produced during an ESD event. A synchronized-disturbance testing methodology is developed that allows accurate control of the instant at which the disturbing signal is applied to the data input lines during an operational cycle of the circuit. The study reveals that these devices are susceptible only during certain time intervals during an operational cycle. The particular interval during which a hip-hop is susceptible is dependent on the logic state of the data input line, the implementation technology of the hip-hop, and the amplitude of the disturbing signal. The total width of the susceptibility intervals is a device parameter that can be used to determine the probability that the hip-hop will fail in the presence of random transient interference pulses.
引用
收藏
页码:75 / 80
页数:6
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