NUCLEATION OF A TWO-DIMENSIONAL COMPOUND DURING EPITAXIAL-GROWTH OF COSI2 ON SI(111)

被引:33
|
作者
PIRRI, C [1 ]
PERUCHETTI, JC [1 ]
GEWINNER, G [1 ]
DERRIEN, J [1 ]
机构
[1] CNRS,ETUD PROPRIETES ELECTR SOLIDES LAB,F-38042 GRENOBLE,FRANCE
来源
PHYSICAL REVIEW B | 1984年 / 30卷 / 10期
关键词
D O I
10.1103/PhysRevB.30.6227
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:6227 / 6229
页数:3
相关论文
共 50 条
  • [21] A NEW EPITAXIAL ORIENTATION OF COSI2 ON (111) SI
    LIN, WT
    WU, KC
    PAN, FM
    THIN SOLID FILMS, 1992, 215 (02) : 184 - 187
  • [22] Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth
    S. V. Sitnikov
    S. S. Kosolobov
    A. V. Latyshev
    Semiconductors, 2017, 51 : 203 - 206
  • [23] Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth
    Sitnikov, S. V.
    Kosolobov, S. S.
    Latyshev, A. V.
    SEMICONDUCTORS, 2017, 51 (02) : 203 - 206
  • [24] GROWTH OF EPITAXIAL COSI2 ON (100)SI
    DASS, MLA
    FRASER, DB
    WEI, CS
    APPLIED PHYSICS LETTERS, 1991, 58 (12) : 1308 - 1310
  • [25] Growth of epitaxial CoSi2 on Si (001)
    Falke, M
    Gebhardt, B
    Teichert, S
    Beddies, G
    Hinneberg, HJ
    EUROPEAN JOURNAL OF CELL BIOLOGY, 1997, 74 : 114 - 114
  • [26] STRAIN IN EPITAXIAL COSI2 FILMS ON SI (111) AND INFERENCE FOR PSEUDOMORPHIC GROWTH
    BAI, G
    NICOLET, MA
    VREELAND, T
    YE, Q
    WANG, KL
    APPLIED PHYSICS LETTERS, 1989, 55 (18) : 1874 - 1876
  • [27] EPITAXIAL-GROWTH OF COSI2 ON BOTH (111) SI AND (100) SI SUBSTRATES BY MULTISTEP ANNEALING OF A TERNARY CO/TI/SI SYSTEM
    LIU, P
    LI, BZ
    SUN, Z
    GU, ZG
    HUANG, WN
    ZHOU, ZY
    NI, RS
    LIN, CL
    ZOU, SC
    HONG, F
    ROZGONYI, GA
    JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) : 1700 - 1706
  • [28] Homogeneous Nucleation of Epitaxial CoSi2 and NiSi in Si Nanowires
    Chou, Yi-Chia
    Wu, Wen-Wei
    Chen, Lih-Juann
    Tu, King-Ning
    NANO LETTERS, 2009, 9 (06) : 2337 - 2342
  • [29] EPITAXIAL-GROWTH OF COSI2 ON (111)SI INSIDE MINIATURE-SIZE OXIDE OPENINGS BY RAPID THERMAL ANNEALING
    HSU, HF
    CHEN, LJ
    CHU, JJ
    JOURNAL OF APPLIED PHYSICS, 1991, 69 (08) : 4282 - 4285
  • [30] CONTROL OF PINHOLES IN EPITAXIAL COSI2 LAYERS ON SI(111)
    TUNG, RT
    BATSTONE, JL
    APPLIED PHYSICS LETTERS, 1988, 52 (08) : 648 - 650