OPTICAL ABSORPTION PHOTOCONDUCTIVITY AND P-N JUNCTIONS IN CADMIUM TELLURIDE

被引:1
|
作者
VUL, BM
VAVILOV, VS
PLOTNIKOV, AF
SOKOLOVA, AA
CHAPNIN, VA
机构
来源
REVUE DE PHYSIQUE APPLIQUEE | 1966年 / 1卷 / 03期
关键词
D O I
10.1051/rphysap:0196600103021700
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:217 / +
页数:1
相关论文
共 50 条
  • [31] CATHODOLUMINESCENCE AT P-N JUNCTIONS IN GAAS
    WITTRY, DB
    KYSER, DF
    JOURNAL OF APPLIED PHYSICS, 1965, 36 (04) : 1387 - &
  • [32] PHOTOVOLTAIC EFFECT IN P-N JUNCTIONS
    CUMMEROW, RL
    PHYSICAL REVIEW, 1954, 95 (01): : 16 - 21
  • [33] CURRENT CARRIERS IN P-N JUNCTIONS
    GRUBNIKOV, ZS
    SOVIET PHYSICS-SOLID STATE, 1961, 3 (06): : 1211 - 1219
  • [34] BISTABLE NOISE IN P-N JUNCTIONS
    HSU, ST
    SOLID-STATE ELECTRONICS, 1971, 14 (06) : 487 - +
  • [35] POPULATION INVERSION IN P-N JUNCTIONS
    NORDMAN, JE
    PROCEEDINGS OF THE IEEE, 1964, 52 (06) : 724 - &
  • [36] BREAKDOWN LOCALIZATION IN P-N JUNCTIONS
    ANUPYLD, AY
    GORYUNOV, NN
    DMITRIYE.AI
    RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1968, 13 (06): : 934 - +
  • [37] THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS
    VUL, BM
    SEGAL, BI
    SOVIET PHYSICS-TECHNICAL PHYSICS, 1958, 3 (04): : 637 - 645
  • [38] AVALANCHE BREAKDOWN IN P-N JUNCTIONS
    SUNOHARA, Y
    REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1969, 17 (1-2): : 133 - &
  • [39] Implanted p-n junctions in GaN
    Cao, XA
    LaRoche, JR
    Ren, F
    Pearton, SJ
    Lothian, JR
    Singh, RK
    Wilson, RG
    Guo, HJ
    Pennycook, SJ
    SOLID-STATE ELECTRONICS, 1999, 43 (07) : 1235 - 1238
  • [40] p-n junctions in silicon nanowires
    Goncher, G.
    Solanki, R.
    Carruthers, J. R.
    Conley, J., Jr.
    Ono, Y.
    JOURNAL OF ELECTRONIC MATERIALS, 2006, 35 (07) : 1509 - 1512