ANALYTIC CHARACTERIZATION OF DYNAMIC OPTICAL SWITCHING OF SYMMETRICAL SELF-ELECTROOPTIC EFFECT DEVICES IN EXTREMELY SHALLOW QUANTUM-WELLS

An impulse response function of p-i-n photodiodes in extremely shallow quantum wells (ESQW's) is analytically given in terms of the LO phonon scattering rate in the well and the carrier transport coefficients in the continuum states. By using this response function the dynamic switching characteristics of symmetric self-electrooptic effect devices in ESQW's (symmetric E-SEED's) are analyzed. In so doing the concomitant effects of carrier sweep-out time. RC time constant, and incident radiation energy are explicitly specified. The RC time constant inherent in symmetric SEED's is shown to speed up the down-switching (from reverse to forward), while substantially delaying the up-switching of two diode voltages involved.