THE PHONON DRAG IN THE SEMICONDUCTORS WITH POSITION DEPENDENT BAND-STRUCTURE

被引：0

作者：

LATU, M

机构：

来源：

REVUE ROUMAINE DE PHYSIQUE | 1983年 / 28卷 / 02期

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暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：159 / 166

页数：8

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[41] TERMS LINEAR IN K IN THE BAND-STRUCTURE OF ZINCBLENDE TYPE SEMICONDUCTORS
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[43] IMPACT IONIZATION BY HOLES IN SEMICONDUCTORS WITH A COMPLEX VALENCE BAND-STRUCTURE
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[44] USE OF PHOTODIELECTRICAL EFFECT TO STUDY BAND-STRUCTURE OF COMPOUND SEMICONDUCTORS
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[48] 2-BAND MODELS FOR THE COMPLEX BAND-STRUCTURE OF III-V-SEMICONDUCTORS
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[49] CHARACTERISTICS OF SURFACE PHONON BANDS AND RELATION TO COMPLEX (PHOON) BAND-STRUCTURE
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