CONTAMINATION EFFECTS IN ION-BEAM MIXED COBALT SILICIDE GROWTH

被引：6
|
作者：
EDWARDS, SC [1 ]
COLLINS, RA [1 ]
DEARNALEY, G [1 ]
机构：
[1] AERE,DIV NUCL PHYS,HARWELL OX11 0RA,OXON,ENGLAND
来源：
VACUUM | 1984年 / 34卷 / 10-1期
关键词：
ION BEAMS - Applications;
D O I：
10.1016/0042-207X(84)90190-8
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The formation of cobalt silicides using 200 keV Ar** plus ion beam mixing has been studied as a function of subsequent vacuum optical annealing at temperatures in the range 500-700 degree C. Elemental intermixing and silicide stoichiometry were studied using Rutherford alpha backscattering. The effects of Ar** plus ion dose on cobalt films thermally evaporated in poor vacuum (10** minus **5 torr) and high vacuum (5 multiplied by 10** minus **9 torr) have been investigated. Dose dependence studies showed that whilst the high-vacuum deposited films formed stoichiometric silicides with zero bombardment dose over the whole temperature range, the contaminated Co film samples required a minimum bombardment dose dependent on temperature.
引用
收藏
页码：1017 / 1019
页数：3
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