RANGE DISTRIBUTION OF IMPLANTED IONS IN SIO2, SI3N4, AND AL2O3

被引：36
|
作者：
CHU, WK [1 ]
CROWDER, BL [1 ]
MAYER, JW [1 ]
ZIEGLER, JF [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
APPLIED PHYSICS LETTERS | 1973年 / 22卷 / 10期
关键词：
D O I：
10.1063/1.1654480
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：490 / 492
页数：3
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