PHOTON STORAGE MODE IN A FORWARD-BIASED P-N-JUNCTION

被引：0

|

作者：

AKOPYAN, EA

MEKHTIEV, AS

POIMANOV, AL

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 83卷 / 02期

关键词：

D O I：

10.1002/pssa.2210830268

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：K215 / K217

页数：3

相关论文

共 50 条

[21] LOW-FREQUENCY NOISE DUE TO CHARGE FLUCTUATIONS IN A DEPLETION LAYER OF A FORWARD-BIASED P-N JUNCTION
TARATUTA, AS
CHAIKA, GE
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (02): : 239 - &
[22] THEORY OF A FORWARD-BIASED DIFFUSED JUNCTION P-L-N RECTIFIER .1. EXACT NUMERICAL SOLUTIONS
CHOO, SC
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (08) : 954 - &
[23] STATIC PARAMETERS OF FORWARD-BIASED P+N'NPN+-THYRISTORS
GREKHOV, IV
KIREEV, OA
KOSTINA, LS
RADIOTEKHNIKA I ELEKTRONIKA, 1975, 20 (02): : 381 - 386
[24] EDGE LUMINESCENCE SPECTRUM OF FORWARD-BIASED GAP P-N JUNCTIONS
BUGARINOVICH, D
EVSTROPO.VV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (03): : 358 - +
[25] VOLTERRA SERIES REPRESENTATION OF A FORWARD-BIASED P-I-N-DIODE
REISS, W
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (12) : 1495 - 1500
[26] A model of the 1/f noise in a forward-biased p-n diode
Dmitriev, A. P.
Levinshtein, M. E.
Kolesnikova, E. N.
Palmour, J. W.
Das, M. K.
Hull, B. A.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (01)
[27] MODELING THE SPACE-CHARGE-LAYER BOUNDARY OF A FORWARD-BIASED JUNCTION
WARNER, RM
LEE, K
JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 5304 - 5310
[28] CAPACITANCE OF ABRUPT P-N-JUNCTION DIODES UNDER FORWARD BIAS
GREEN, MA
GUNN, MW
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 19 (01): : K93 - K96
[29] MOS-TRANSISTORS WITH A FORWARD-BIASED SOURCE-SUBSTRATE JUNCTION
VELCHEV, NB
ROUMENIN, TS
SMIRNOV, ND
SOLID-STATE ELECTRONICS, 1982, 25 (12) : 1157 - 1160
[30] PROTONIC P-N-JUNCTION
LANGER, JJ
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (03): : 195 - 198

← 1 2 3 4 5 →