GROWTH OF GAAS AND INP ON SI USING PLASMA STIMULATED MOCVD

被引：4
|
作者：
LEIBER, J [1 ]
BRAUERS, A [1 ]
HEINECKE, H [1 ]
LUTH, H [1 ]
BALK, P [1 ]
机构：
[1] AACHEN TECH UNIV,INST PHYS 2,D-5100 AACHEN,FED REP GER
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 96卷 / 03期
关键词：
D O I：
10.1016/0022-0248(89)90042-0
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：483 / 489
页数：7
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