HIGH TRANSCONDUCTANCE ALGAN/GAN OPTOELECTRONIC HETEROSTRUCTURE FIELD-EFFECT TRANSISTOR

被引：16
|
作者：
KHAN, MA [1 ]
SHUR, MS [1 ]
CHEN, Q [1 ]
机构：
[1] UNIV VIRGINIA,DEPT ELECT ENGN,CHARLOTTESVILLE,VA 22903
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 24期
关键词：
FIELD EFFECT TRANSISTORS; 2-DIMENSIONAL ELECTRON GAS;
D O I：
10.1049/el:19951408
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors report on 1 mu m gate Al0.15Ga0.85N/GaN heterostructure field effect transistors, which demonstrate a high transconductance (up to 64mS/mm) under illumination. The increase in the transconductance and in device current under light is explained by the creation of trapped positive charge and conduction electrons in the channel, which enhances the surface density of the two-dimensional electron gas in the device channel up to 2 X 10(12)cm(-3) and decreases the source series resistance.
引用
收藏
页码：2130 / 2131
页数：2
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