SIMPLE MODEL OF MULTIPLE CHARGE STATES OF TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS

被引：328
|
作者：
HALDANE, FDM
ANDERSON, PW
机构：
[1] CAVENDISH LAB,CAMBRIDGE,ENGLAND
[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
PHYSICAL REVIEW B | 1976年 / 13卷 / 06期
关键词：
D O I：
10.1103/PhysRevB.13.2553
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：2553 / 2559
页数：7
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