GROWTH AND CHARACTERIZATION OF ZNTE-N-P-ZNTE/N-ALSB DIODES

被引：11
|
作者：
HAN, J
STAVRINIDES, TS
KOBAYASHI, M
GUNSHOR, RL
HAGEROTT, MM
NURMIKKO, AV
机构：
[1] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
[2] CHIBA UNIV,DEPT ELECT ENGN,CHIBA,JAPAN
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 05期
关键词：
MOLECULAR BEAM EPITAXY; NITROGEN-DOPED ZNTE; P-ZNTE/N-ALSB DIODES;
D O I：
10.1007/BF02661618
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In recent months the successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy was one factor leading to the realization of diode lasers and light emitting diodes. This paper reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels exceeding the 10(19) CM-3 range are reported along with electrical, optical, and microstructural characterization. The nitrogen-doped ZnTe is used to implement p-ZnTe/n-AlSb diodes; the growth and characterization of these heterojunction diodes are described.
引用
收藏
页码：485 / 488
页数：4
相关论文
共 50 条
  • [31] Conduction Mechanism in n-CdSe/p-ZnTe Heterojunction
    Shashidhara Acharya
    Kasturi V. Bangera
    G. K. Shivakumar
    Journal of Electronic Materials, 2016, 45 : 3324 - 3331
  • [32] Conduction Mechanism in n-CdSe/p-ZnTe Heterojunction
    Acharya, Shashidhara
    Bangera, Kasturi V.
    Shivakumar, G. K.
    JOURNAL OF ELECTRONIC MATERIALS, 2016, 45 (07) : 3324 - 3331
  • [33] INJECTION ELECTROLUMINESCENCE EMITTED BY N-ZNO-P-ZNTE HETEROJUNCTIONS
    TSURKAN, AE
    FEDOTOVA, ND
    KICHERMAN, LV
    PASKO, PG
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (06): : 786 - 787
  • [34] Growth of n-type ZnTe films and formation of ohmic contacts
    Hayashida, K
    Nishio, M
    Yoshiaki
    Guo, QX
    Ogawa, H
    FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 2000, 4086 : 248 - 251
  • [35] n-ZnSe/p-ZnTe/n-CdSe tandem solar cells
    Gashin, P
    Focsha, A
    Potlog, T
    Simashkevich, AV
    Leondar, V
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1997, 46 (04) : 323 - 331
  • [36] COMPENSATION AND TRANSPORT CHARACTERISTICS OF N-ZNTE
    RUDA, HE
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1991, 24 (07) : 1158 - 1162
  • [37] Growth and characterisation of n- and p-type ZnTe thin films for applications in electronic devices
    Olusola, O. I.
    Madugu, M. L.
    Abdul-Manaf, N. A.
    Dharmadasa, I. M.
    CURRENT APPLIED PHYSICS, 2016, 16 (02) : 120 - 130
  • [38] Transport properties of ZnTe:N thin films
    Chi, Hang
    Chen, Chihyu
    Phillips, Jamie D.
    Uher, Ctirad
    APPLIED PHYSICS LETTERS, 2013, 103 (04)
  • [39] MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF ZNTE AND ZNTE-CDTE SUPERLATTICE
    LI, J
    HE, L
    ZHU, NC
    LAO, PD
    YUAN, SX
    JOURNAL OF CRYSTAL GROWTH, 1992, 119 (3-4) : 322 - 328
  • [40] Optimized ZnSe:N/ZnTe:N contact structure of ZnSe-based II-VI laser diodes
    Kijima, S
    Okuyama, H
    Sanaka, Y
    Kobayashi, T
    Tomiya, S
    Ishibashi, A
    APPLIED PHYSICS LETTERS, 1998, 73 (02) : 235 - 237
12345