GROWTH AND CHARACTERIZATION OF ZNTE-N-P-ZNTE/N-ALSB DIODES

被引：11
|
作者：
HAN, J
STAVRINIDES, TS
KOBAYASHI, M
GUNSHOR, RL
HAGEROTT, MM
NURMIKKO, AV
机构：
[1] BROWN UNIV,DIV ENGN,PROVIDENCE,RI 02912
[2] CHIBA UNIV,DEPT ELECT ENGN,CHIBA,JAPAN
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1993年 / 22卷 / 05期
关键词：
MOLECULAR BEAM EPITAXY; NITROGEN-DOPED ZNTE; P-ZNTE/N-ALSB DIODES;
D O I：
10.1007/BF02661618
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In recent months the successful p-doping of ZnSe and Zn(S,Se) using a nitrogen plasma source during growth by molecular beam epitaxy was one factor leading to the realization of diode lasers and light emitting diodes. This paper reports the results of the nitrogen doping of ZnTe using similar techniques. Doping levels exceeding the 10(19) CM-3 range are reported along with electrical, optical, and microstructural characterization. The nitrogen-doped ZnTe is used to implement p-ZnTe/n-AlSb diodes; the growth and characterization of these heterojunction diodes are described.
引用
收藏
页码：485 / 488
页数：4
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