DEEP IMPURITY LEVELS IN SILICON UNDER HYDROSTATIC-PRESSURE

被引：0
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作者：
XIA, JB
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来源：
CHINESE PHYSICS | 1985年 / 5卷 / 02期
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中图分类号：
O4 [物理学];
学科分类号：
0702 ;
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页码：471 / 477
页数：7
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