ELECTRONIC-STRUCTURE OF METAL-SEMICONDUCTOR INTERFACES

被引：11
作者：
BATRA, IP
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1983年 / 1卷 / 03期
关键词：
D O I：
10.1116/1.582598
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：558 / 563
页数：6
相关论文
共 59 条
[21]   THEORY OF SURFACE STATES [J].
HEINE, V .
PHYSICAL REVIEW, 1965, 138 (6A) :1689-&
[22]   DIELECTRIC THEORY OF BARRIER HEIGHT AT METAL-SEMICONDUCTOR AND METAL-INSULATOR INTERFACES [J].
HIRABAYA.K .
PHYSICAL REVIEW B, 1971, 3 (12) :4023-&
[23]   MOMENTUM-SPACE FORMALISM FOR THE TOTAL ENERGY OF SOLIDS [J].
IHM, J ;
ZUNGER, A ;
COHEN, ML .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (21) :4409-4422
[24]   1ST-PRINCIPLES DETERMINATION OF THE STRUCTURE OF THE AL/GAAS (110) SURFACE [J].
IHM, J ;
JOANNOPOULOS, JD .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02) :340-343
[25]   MANY-BODY EFFECTS AT METAL-SEMICONDUCTOR JUNCTIONS .1. SURFACE PLASMONS AND ELECTRON-ELECTRON SCREENED INTERACTION [J].
INKSON, JC .
JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (18) :2599-&
[26]   ATOMIC GEOMETRY OF AL-GAAS INTERFACES - GAAS (110)-P(1X1)-AL(THETA), 0 LESS-THAN-OR-EQUAL TO THETA LESS-THAN-OR-EQUAL TO 8.5 MONOLAYERS [J].
KAHN, A ;
CARELLI, J ;
KANANI, D ;
DUKE, CB ;
PATON, A ;
BRILLSON, L .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :331-334
[27]   SURFACE REACTIONS OF SILICON WITH ALUMINUM AND WITH INDIUM [J].
LANDER, JJ ;
MORRISON, J .
SURFACE SCIENCE, 1964, 2 :553-565
[28]   IONICITY AND THEORY OF SCHOTTKY BARRIERS [J].
LOUIE, SG ;
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1977, 15 (04) :2154-2162
[29]   ELECTRONIC-STRUCTURE OF A METAL-SEMICONDUCTOR INTERFACE [J].
LOUIE, SG ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 13 (06) :2461-2469
[30]   SELF-CONSISTENT PSEUDOPOTENTIAL CALCULATION FOR A METAL-SEMICONDUCTOR INTERFACE [J].
LOUIE, SG ;
COHEN, ML .
PHYSICAL REVIEW LETTERS, 1975, 35 (13) :866-869
123456