共 50 条
- [43] DISTRIBUTIONS OF THE CONCENTRATIONS OF SHALLOW AND DEEP CHARGED CENTERS IN THE INDIUM-PHOSPHIDE LAYERS DOPED BY IMPLANTATION OF BERYLLIUM IONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (03): : 282 - 285
- [44] ABSORPTION OF PHOTONS OF ENERGY LESS THAN THE OPTICAL-ENERGY OF IMPURITY IONIZATION IN MANGANESE-DOPED INDIUM-PHOSPHIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1985, 19 (10): : 1084 - 1086
- [50] High-resolution photoinduced transient spectroscopy of defect centers in vanadium-doped semi-insulating SiC Journal of Materials Science: Materials in Electronics, 2008, 19 : 224 - 228