ALINAS/INP DELTA-DOPED CHANNEL FIELD-EFFECT TRANSISTOR GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION

被引：9

作者：

JEONG, YH ^{[1
]}

JEONG, DH ^{[1
]}

HONG, WP ^{[1
]}

CANEAU, C ^{[1
]}

BHAT, R ^{[1
]}

HAYES, JR ^{[1
]}

机构：

[1] BELL COMMUN RES INST,RED BANK,NJ 07701

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 2A期

关键词：

ALINAS/INP; DELTA-DOPED; FET; OMCVD;

D O I：

10.1143/JJAP.31.L66

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on organometallic chemical vapor deposition (OMCVD)-grown AlInAs/InP field effect transistors (EET's), employing a delta-doped channel. The EET's, having a gate length of 1.0-mu-m, demonstrated excellent saturation characteristics and a broad plateau of transconductance around a peak value of 210 mS/mm. The transistors were also highly stable with no hysteresis or long-term drain current drift being observed.

引用

页码：L66 / L67

页数：2

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