ALINAS/INP DELTA-DOPED CHANNEL FIELD-EFFECT TRANSISTOR GROWN BY ORGANOMETALLIC CHEMICAL VAPOR-DEPOSITION

被引：9
|
作者：
JEONG, YH [1 ]
JEONG, DH [1 ]
HONG, WP [1 ]
CANEAU, C [1 ]
BHAT, R [1 ]
HAYES, JR [1 ]
机构：
[1] BELL COMMUN RES INST,RED BANK,NJ 07701
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 2A期
关键词：
ALINAS/INP; DELTA-DOPED; FET; OMCVD;
D O I：
10.1143/JJAP.31.L66
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on organometallic chemical vapor deposition (OMCVD)-grown AlInAs/InP field effect transistors (EET's), employing a delta-doped channel. The EET's, having a gate length of 1.0-mu-m, demonstrated excellent saturation characteristics and a broad plateau of transconductance around a peak value of 210 mS/mm. The transistors were also highly stable with no hysteresis or long-term drain current drift being observed.
引用
收藏
页码：L66 / L67
页数：2
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