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- [1] EPITAXIAL-GROWTH OF HIGH-QUALITY ZNSE ON GAAS SUBSTRATE BY ATMOSPHERIC-PRESSURE MOVPE USING DIMETHYLZINC AND HYDROGEN SELENIDE JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (05): : L561 - L563
- [9] VAPOR-PHASE EPITAXIAL-GROWTH OF ZNSE USING ZINC AND SELENIUM AS SOURCE MATERIALS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1984, 23 (02): : 159 - 163