ON THE GENERATION RECOMBINATION CURRENTS IN P-N-JUNCTIONS OF SEMICONDUCTORS WITH CONTINUOUS GAP-STATE SPECTRUM

被引：0

作者：

LEIDERMAN, AY

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来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1985年 / 87卷 / 01期

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T [工业技术];

学科分类号：

08 ;

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引用

页码：363 / 372

页数：10

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[31] TUNNELING CONTRIBUTIONS TO NOISE IN NARROW-GAP P-N-JUNCTIONS
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