VACUUM-ULTRAVIOLET SUBSTRATE CLEANING AND ETCHING

被引：0
|
作者：
ALLEN, LR
GRANT, JM
NGUYEN, T
VALIEV, K
VELIKOV, L
MESHMAN, B
机构：
[1] RUSSIAN ACAD SCI,INST PHYS & TECHNOL,MOSCOW 117901,RUSSIA
[2] INT RES & SEMICOND EQUIPMENT TECHNOL INC,SAN JOSE,CA
来源：
SOLID STATE TECHNOLOGY | 1995年 / 38卷 / 05期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Light in the vacuum ultraviolet region (120-160 nm) promotes high quantum efficiency photoexcited processes (e.g., C-C bond breaking, oxygen molecule dissociation), has a very small penetration depth (30-50 nm), and can be used effectively in silicon surface cleaning. This article discusses potential applications of this technology and describes a vacuum ultraviolet light source.
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页码：77 / &
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