OPTICAL AND RF CHARACTERISTICS OF SHORT-CAVITY-LENGTH MULTIQUANTUM-WELL STRAINED-LAYER LASERS

被引：11
|
作者：
LESTER, LF [1 ]
SCHAFF, WJ [1 ]
SONG, X [1 ]
EASTMAN, LF [1 ]
机构：
[1] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1991年 / 3卷 / 12期
关键词：
D O I：
10.1109/68.117996
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Short-cavity-length strained-layer lasers with four In0.3Ga0.7As quantum wells have been fabricated using chemically assisted ion beam etching (CAIBE). These lasers have a very low K factor of 0.14 ns and a high differential gain of 1.1 x 10(-15) cm2. A 3 dB modulation bandwidth of 23.5 GHz has been measured on a 50-mu-m cavity-length device. This is the highest reported bandwidth for a quantum well laser.
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页码：1049 / 1051
页数：3
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