DESIGN AND CHARACTERIZATION OF ION-IMPLANTED TRACKS FOR 16 MBIT/CM2 STORAGE DENSITY BUBBLE MEMORY DEVICES

被引:3
|
作者
SATO, T
IKEDA, T
SUZUKI, R
机构
关键词
D O I
10.1109/TMAG.1986.1064290
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:168 / 174
页数:7
相关论文
共 29 条
  • [21] EFFECTS OF N-H2 DOSES IN ION-IMPLANTED BUBBLE MEMORY TEST CHIPS
    NELSON, TJ
    BALLINTINE, JE
    REITH, LA
    ROMAN, BJ
    SLUSKY, SEG
    WOLFE, R
    IEEE TRANSACTIONS ON MAGNETICS, 1982, 18 (06) : 1358 - 1360
  • [22] Design and Fabrication of Ion-Implanted Moat Etch Termination Resulting in 0.7 m $\Omega\cdot$ cm2/1500 V GaN Diodes
    Ji, Dong
    Li, Siwei
    Ercan, Burcu
    Ren, Chenhao
    Chowdhury, Srabanti
    IEEE ELECTRON DEVICE LETTERS, 2020, 41 (02) : 264 - 267
  • [23] ANALYTIC MODEL FOR DESIGN AND OPTIMIZATION OF ION-IMPLANTED I2L DEVICES
    EVANS, SA
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1977, 12 (02) : 191 - 198
  • [24] DESIGN AND CHARACTERISTICS OF 4-MU-M PERIOD ION-IMPLANTED BUBBLE-DEVICES WITH MAJOR LINE BLOCK REPLICATE GATE
    YAMAGISHI, K
    SATOH, Y
    MIYASHITA, T
    OHASHI, M
    BETSUI, K
    MATSUDA, K
    KOMENOU, K
    IEEE TRANSACTIONS ON MAGNETICS, 1983, 19 (05) : 1829 - 1831
  • [25] Ion-implanted surface analysis reference materials: Certification of dose densities from 10(16) to 10(13) cm(-2)
    Gries, WH
    SURFACE AND INTERFACE ANALYSIS, 1996, 24 (07) : 431 - 447
  • [26] Fully Ion-Implanted and Screen-Printed 20.2% Efficient Front Junction Silicon Cells on 239 cm2 n-Type CZ Substrate
    Tao, Yuguo
    Ok, Young-Woo
    Zimbardi, Francesco
    Upadhyaya, Ajay D.
    Lai, Jiun-Hong
    Ning, Steven
    Upadhyaya, Vijaykumar D.
    Rohatgi, Ajeet
    IEEE JOURNAL OF PHOTOVOLTAICS, 2014, 4 (01): : 58 - 63
  • [27] Homoepitaxial single crystal diamond grown on natural diamond seeds (type IIa) with boron-implanted layer demonstrating the highest mobility of 1150 cm2/V s at 300 K for ion-implanted diamond
    Ratnikova, A. K.
    Dukhnovsky, M. P.
    Fedorov, Yu. Yu.
    Zemlyakov, V. E.
    Muchnikov, A. B.
    Vikharev, A. L.
    Gorbachev, A. M.
    Radishev, D. B.
    Altukhov, A. A.
    Mitenkin, A. V.
    DIAMOND AND RELATED MATERIALS, 2011, 20 (08) : 1243 - 1245
  • [28] Fabrication of 2700-v 12-mΩ•cm2 non ion-implanted 4H-SiC BJTs with common-emitter current gain of 50
    Ghandi, Reza
    Lee, Hyung-Seok
    Domeij, Martin
    Buono, Benedetto
    Zetterling, Carl-Mikael
    Ostling, Mikael
    IEEE ELECTRON DEVICE LETTERS, 2008, 29 (10) : 1135 - 1137
  • [29] Design and construction of a novel hierarchical Ag/{111}Ag3PO4/PANI/Pt photoanode with boosted interfacial charge transfer rate and high photocurrent density > 16 mA/cm2 for sunlight-driven water splitting
    Ng, Wen Cai
    Saha, Tridib
    Ilankoon, I. M. S. K.
    Chong, Meng Nan
    ENERGY CONVERSION AND MANAGEMENT, 2022, 271