2ND SUBBAND POPULATION IN DELTA-DOPED AL0.48IN0.52AS/GA(0.47)IN(0.5)3AS HETEROSTRUCTURES

被引：30
|
作者：
LO, I
MITCHEL, WC
AHOUJJA, M
CHENG, JP
FATHIMULLA, A
MIER, H
机构：
[1] WRIGHT LAB,MAT DIRECTORATE,WRIGHT PATTERSON AFB,OH 45433
[2] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139
来源：
APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 06期
关键词：
D O I：
10.1063/1.114083
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have observed the population of the second two-dimensional electron subband in δ-doped Al0.48In0.52As/Ga0.47In0.53As heterostructures by Shubnikov-de Haas measurements. After illuminating the samples at low temperature, the electron density increases from 17.3 to 18.2×1011 cm-2 for the first subband and from 3.6 to 4.1×1011 cm-2 for the second subband. The population of the second subband begins when the first subband is filled at a density of 10.3×1011 cm-2. The effective mass of the second subband is equal to (0.045±0.003)m0, indicating significant band nonparabolicity in the Ga0.47In0.53As well.© 1995 American Institute of Physics.
引用
收藏
页码：754 / 756
页数：3
相关论文
共 50 条
  • [1] 2ND SUBBAND POPULATION IN DELTA-DOPED AL0.48IN0.52AS/GA0.47IN0.53AS HETEROSTRUCTURES (VOL 66, PG 754, 1995)
    LO, I
    MITCHEL, WC
    AHOUJJA, M
    CHENG, JP
    FATHIMULLA, A
    MIER, H
    APPLIED PHYSICS LETTERS, 1995, 67 (03) : 444 - 444
  • [2] PERSISTENT-PHOTOCONDUCTIVITY EFFECT IN DELTA-DOPED AL0.48IN0.52AS/GA0.47IN0.53AS HETEROSTRUCTURES
    LO, IK
    WANG, DP
    HSIEH, KY
    WANG, TF
    MITCHEL, WC
    AHOUJJA, M
    CHENG, JP
    FATHIMULLA, A
    HIER, H
    PHYSICAL REVIEW B, 1995, 52 (20): : 14671 - 14676
  • [3] Effective mass of two-dimensional electron gas in delta-doped Al0.48In0.52As/Ga0.47In0.53As quantum wells
    Lo, I
    Cheng, JP
    Chen, YF
    Mitchel, WC
    JOURNAL OF APPLIED PHYSICS, 1996, 80 (06) : 3355 - 3359
  • [4] TWO-DIMENSIONAL ELECTRON-GAS DENSITY CALCULATION IN GA0.47IN0.53AS/AL0.48IN0.52AS, GA0.47IN0.53AS/INP, AND GA0.47IN0.53AS/INP/AL0.48IN0.52AS HETEROSTRUCTURES
    YOON, KS
    STRINGFELLOW, GB
    HUBER, RJ
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (12) : 5915 - 5919
  • [5] ABSORPTION-SPECTROSCOPY ON GA0.47IN0.53AS AL0.48IN0.52AS MULTI-QUANTUM-WELL HETEROSTRUCTURES .2. SUBBAND STRUCTURE
    STOLZ, W
    MAAN, JC
    ALTARELLI, M
    TAPFER, L
    PLOOG, K
    PHYSICAL REVIEW B, 1987, 36 (08): : 4310 - 4315
  • [6] LUMINESCENCE EXCITATION SPECTROSCOPY ON GA0.47IN0.53AS/AL0.48IN0.52AS QUANTUM-WELL HETEROSTRUCTURES
    WAGNER, J
    STOLZ, W
    PLOOG, K
    PHYSICAL REVIEW B, 1985, 32 (06): : 4214 - 4216
  • [7] Photoluminescence of heterostructures with highly strained GaAs quantum wells in Al0.48In0.52As and Ga0.47In0.53As layers
    D. A. Vinokurov
    S. A. Zorina
    V. A. Kapitonov
    D. N. Nikolaev
    A. L. Stankevich
    V. V. Shamakhov
    I. S. Tarasov
    Technical Physics Letters, 2006, 32 : 299 - 301
  • [8] Growth of Al0.48In0.52As/Ga0.47In0.53As heterostructures lattice relaxed on GaAs and lattice matched on InP
    Haupt, M
    Ganser, P
    Kohler, K
    Emminger, S
    Muller, S
    Rothemund, W
    1996 EIGHTH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, 1996, : 89 - 92
  • [9] Photoluminescence of heterostructures with highly strained GaAs quantum wells in Al0.48In0.52As and Ga0.47In0.53As layers
    Vinokurov, D. A.
    Zorina, S. A.
    Kapitonov, V. A.
    Nikolaev, D. N.
    Stankevich, A. L.
    Shamakhov, V. V.
    Tarasov, I. S.
    TECHNICAL PHYSICS LETTERS, 2006, 32 (04) : 299 - 301
  • [10] SHORT CHANNEL GA0.47IN0.53AS/AL0.48IN0.52AS SELECTIVELY DOPED FIELD-EFFECT TRANSISTORS
    CHEN, CY
    CHO, AY
    ALAVI, K
    GARBINSKI, PA
    ELECTRON DEVICE LETTERS, 1982, 3 (08): : 205 - 208
12345